Fig. 2: Temperature- and gate-dependent MR of FGT/Gr heterostructure. | Nature Communications

Fig. 2: Temperature- and gate-dependent MR of FGT/Gr heterostructure.

From: Giant magnetoresistance induced by spin-dependent orbital coupling in Fe3GeTe2/graphene heterostructures

Fig. 2

a The MR curves of FGT/Gr heterostructure in Device A as a function of magnetic field at different temperature points. b Variation of MR with temperature under different magnetic fields in Device A. c Transfer curves of FGT/Gr heterostructure in Device C measured at room temperature under different magnetic fields. d Normalized MR of the FGT/Gr heterostructure in Device C under three representative magnetic fields as a function of gate voltage.

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