Fig. 3: Atom and band structure of BiVO4 {010} surfaces with different defects. | Nature Communications

Fig. 3: Atom and band structure of BiVO4 {010} surfaces with different defects.

From: Etched BiVO4 photocatalyst with charge separation efficiency exceeding 90%

Fig. 3

a Optimized atomic models, (b) TDOS, and (c) band alignment of different BiVO4 {010} surfaces. d A schematic illustration of the band structure of BiVO4 and ion-substituted layer. Herein, 1, BiVO4 {010} surface, 2, BiVO4 {010} surface-Vac(VO2), 3, BiVO4 {010} surface-NaV, 4, BiVO4 {010} surface-Na(VO2). CBM conduction band minimum, VBM valance band maximum.

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