Fig. 2: Charge-layer-locked (CLL) trions in the twisted WSe2/WS2/WSe2 hetero-trilayer.
From: Correlated fermionic-bosonic insulating states in twisted hetero-trilayer semiconductors
a Schematic geometry of the twisted WSe2/WS2/WSe2 trilayer in a dual-gate configuration. VTG and VBG: the top and bottom gate voltages; Gr: graphene; hBN: hexagonal boron nitride; CLL trion: charge-layer-locked trion; IX-Top: inter-layer exciton in the top bilayer; and IX-Bottom: inter-layer exciton in the bottom bilayer. b, c Photoluminescence (PL) mapping images with the PL energy of ~ 1.46 eV in the top and bottom bilayer regions and that of ~ 1.37 eV in the trilayer region at 10 K from Device 1. Dashed blue, yellow, and red outlines mark the top bilayer (Top BL), bottom bilayer (Bottom BL), and trilayer regions, respectively. Scale bar is 10 μm. Excitation power:1 mW. d PL emission as a function of the electric field in the trilayer and two bilayer regions at 10 K from Device 1. VTG-VBG corresponds to the out-of-plane electric field. Excitation power: 109 μW. e PL emission as a function of the electric field in the trilayer and two bilayer regions at 297 K from Device 7. Excitation power: 3.5 mW.
