Fig. 1: Four-terminal measurements of 5-SL MBT device.
From: Zero-field chiral edge transport in an intrinsic magnetic topological insulator MnBi2Te4
a Schematic structure of the MnBi2Te4 device. b The electrode configuration of the device. Gray boxes represent electrodes and the number within denotes the serial number of each electrode. c Rxx and Ryx as functions of carrier density with back gate voltage fixed at 19.82 V. AC current with RMS amplitude of 10 nA is added through electrode 1 and 5. Vxx and Vxy are measured with electrode 2–3 and 2–8, respectively. The blue shaded area denotes the charge neutrality region. d Magnetic field dependent Rxx at CNP. Red and blue curve represents the up and down sweep of magnetic field. e Magnetic field dependent Ryx at CNP. Rxx and Ryx curves are symmetrized and antisymmetrized to eliminate components from other direction. f Arrhenius plots of Rxx at different magnetic fields. The x axis is the reciprocal of temperature while the y axis being ln Rxx, lines are linear fitting of data points.
