Fig. 3: Electrical performances of field-effect transistors (FETs) based on Se-transferred MoS2 films.
From: Se-mediated dry transfer of wafer-scale 2D semiconductors for advanced electronics
Photograph (a) and optical image (b) of an as-fabricated 2-in. monolayer MoS2 FET array. c Device structure and SEM image of an as-fabricated MoS2 FET. SEM: scanning electron microscope Output (d) and (e) transfer curves of a typical MoS2 FET. f Transfer curves of a FET upon double-sweeping of Vg, showing small hysteresis. Vg: the back-gate voltage. g The transfer characteristics curves from 200 Se-transferred MoS2 FETs. Inset: the transfer characteristics curves of PMMA- transferred MoS2 FETs for comparison. Statistical distribution of Ion (h) and Ion/Ioff ratios (i) with both Se-transferred samples and PMMA-transferred samples involved. Ion: on-current value, Ion/Ioff ratios: on/off current ratios.
