Fig. 4: Logical circuits based on Se-mediated transferred MoS2 films.
From: Se-mediated dry transfer of wafer-scale 2D semiconductors for advanced electronics
a Optical images of AND, NAND, NOR gates, and ROs. Scale bar, 100 μm. b Output characteristics of an AND, NAND, NOR gate as a function of input voltage pulses at Vdd = 5 V. c The corresponding logic truth tables. d VTC for a MoS2 inverter. VTC: Voltage transfer characteristics, Vin: input voltage, Vout: output voltage. e The static voltage gains and power consumption of a MoS2 inverter at various Vdd. f Normalized output signals of 3-, 5-, and 11-stage 2D MoS2 ROs measured at Vdd = 10 V. g The output frequency varies with Vdd from 1 V to 10 V. Inset: the corresponding delay time per stage (τ). h Comprehensive comparison of the Se-mediated 2D transfer strategy with parts of previous reported work. μ: the electron mobility, Compatibility: the potential of 2D films transfer method for large-scale integration based on standard semiconductor processes.
