Fig. 2: SOTs in AFI/FM/Insulator.
From: Magnetization switching driven by magnonic spin dissipation
a Schematic illustration of the harmonic Hall voltage measurement, where IAC is a.c. charge current, ϕH is an azimuthal angle of the external magnetic field (Hext) applied in the x-y plane with respect to the applied current direction. b The field-like (HFL) and damping-like (HDL) components of SOTs vs. the charge current density (JAC), as measured in four different materials stacks: NiO(1.5)/Ni(3)/SiOx(2), V2O3(3)/Cr2O3(80)/Ni(3)/SiOx(2), SiOx(Subs.)/Ni(3)/SiOx(2), and MgO(Subs.)/Ni(3)/SiOx(2). The numbers and “Subs.” in the parentheses denote the thickness in nanometers and the substrate, respectively. The two controls samples, MgO(Subs.)/Ni(3)/SiOx(2) and SiOx(Subs.)/Ni(3)/SiOx(2), have nominally asymmetric and symmetric interfaces, respectively. The solid lines represent the linear fitting curves.
