Fig. 4: AFI-thickness dependent SOTs.
From: Magnetization switching driven by magnonic spin dissipation
a Dependence of effective spin Hall angles on NiO thickness (tNiO) for NiO(tNiO)/Ni(3)/SiOx(2) films, as measured at room temperature. The numbers in parentheses are in nanometers. The top and bottom panels correspond to field-like (θSFL) and damping-like (θSDL) components, respectively. b Dependence of effective spin Hall angles on Cr2O3 thickness \({t}_{{{{\rm{Cr}}}}_{2}{{{\rm{O}}}}_{3}}\) for V2O3(3)/Cr2O3\({t}_{{{{\rm{Cr}}}}_{2}{{{\rm{O}}}}_{3}}\)/Ni(3)/SiOx(2) films on m-plane sapphire \(({10}\bar{1}{0})\) substrates, as measured at room temperature. The solid lines represent the fitting curves obtained from Eq. (1) in Methods (see Supplementary Information S7 for more details).
