Fig. 1: Crystal structure and basic characterization of thin film TaIrTe4. | Nature Communications

Fig. 1: Crystal structure and basic characterization of thin film TaIrTe4.

From: Probing interplay of topological properties and electron correlation in TaIrTe4 via nonlinear Hall effect

Fig. 1

a The lattice structure of TaIrTe4 from the top view (left) and side view (right). The crystalline directions are noted. b Angle-resolved Raman spectra intensity for the hBN-covered few-layer TaIrTe4 measured in a parallel-polarized configuration at stage rotation angles of 0° and 90°, the polarization is parallel with the crystalline \(\hat{{{{\rm{a}}}}}\)-axis and \(\hat{{{{\rm{b}}}}}\)-axis, respectively. c Schematic and optical image of the Hall bar-shaped device to measure NLHE. The second harmonic Hall voltage is maximized along the \(\hat{{{{\rm{b}}}}}\)-axis with alternating driving current along the \(\hat{{{{\rm{a}}}}}\)-axis. Scale bar, 10 µm. d The typical NLH response \({V}_{{{{\rm{ab}}}}}^{2\omega }\) at temperatures of \(T=2\) \({{{\rm{K}}}}\) and \(T=300\) \({{{\rm{K}}}}\). Dashed curves represent quadratic fits to the V–I characteristics.

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