Fig. 3: Distinct bulk and edge spin polarization in 2.8 nm (four-layer) MoTe2.
From: Direct observation of distinct bulk and edge nonequilibrium spin accumulation in ultrathin MoTe2
a Device schematics for left edge, left bulk, right bulk, and right edge Ni contacts on 2.8 nm MoTe2 samples. Gold and gray circles indicate Au and Ni contacts, respectively. b Spin accumulation measurements normalized to current density for each Ni contact with B || b to detect for Sb (top panels) and B || a to detect for Sa (bottom panels). The left and right bulk measurements are consistent with those seen for thicker flakes; however, left and right edges now exhibit finite and opposite hysteresis in both Sb and Sa configurations. c Schematics of the four CSC mechanisms determined for 2.8 nm MoTe2. As in thicker flakes, SHE \({\sigma }_{{ca}}^{b}\) and REE \({\alpha }_{{aa}}\) account for the bulk spin polarizations Sb and Sa, respectively, while additional Sb and Sa edge polarizations are attributed to SHE elements \({\sigma }_{{ba}}^{b}\) and \({\sigma }_{{ba}}^{a}\), respectively. The unconventional CSC elements are grouped and outlined by the red dashed lines.
