Fig. 4: Electrical and photoelectric properties of chiral monolayer ReS2 single crystals.
From: Chirality-transferred epitaxy of circular polarization-sensitive ReS2 monolayer single crystals
a Ids-Vg curves of single-crystalline and polycrystalline monolayer ReS2-based field effect transistor (FET) devices. Here, Ids denotes the drain-source current, and Vg is the gate voltage. The channel length/width ratios (L/W) are 2.57 and 2.49 for the single- and poly-crystalline devices, respectively. Inset is the linear polarization-dependent photocurrent of the single-crystalline device under 532 nm laser illumination. b Carrier mobility vs. anisotropic ratio in photodetection of various 2D low-symmetry materials to compare our ReS2 device performance with the other state-of-the-art devices (Supplementary Table 1). c Statistical distributions of full width at half maximum (FWHM) and intensities corresponding to Raman mode I and V for ReS2 single crystals grown on chiral MgO and polycrystals grown on α-Al2O3. Each substrate counted 30 domains. d CPR spectra for R- and S-ReS2 transferred onto the MgO(001), α-Al2O3(0001), and SiO2/Si substrate, respectively. e CID values for R- and S-ReS2 on MgO(001), α-Al2O3(0001), and SiO2/Si. Each substrate counted 20 domains. Error bars are standard deviations. f, g Ids-Vds curves of R- and S-ReS2-based photodetectors under 532 nm circularly polarized light (CPL) illumination. Error bars represent the standard deviation from several measurements. h Comparison of the asymmetrical factor for photocurrent between our monolayer chiral single-crystalline ReS2-based photodetector for CPL detection and the other state-of-the-art low-symmetry 2D material-based devices (Supplementary Table 2).
