Fig. 5: Infrared imaging and PbSe detector array.

Schematic for (a) active and (b) and passive target detection. The imaging is captured by a blackbody-sensitive T-shaped PbSe device after the target (carbon fiber heating tube) is heated. c Reflective imaging through scanning patterns using lasers of 532  nm and 808  nm. Scale bars, 100  mm. d–g, Digital photograph (d) of target by a commercial CMOS camera and full spectrum image (e) of target by our PbSe photodetector. The target temperature is 626  K. With the silicon wafer in front of the target, the corresponding images are shown in (f) and (g), respectively. The white dotted line represents the position of the silicon wafer. Scale bars, 1  cm. h Optical image of the 32 × 32 pixel spatially confined PbSe detector array. Scale bar, 1.5  mm. i SEM image of red rectangular in (h). Scale bar, 360 μm. j Dark voltage and photovoltage distribution in selected 8 × 8 devices under 4 μm laser (0.17 μW) illumination. The inset is the detectivity distribution.