Fig. 1: Device fabrication and experimental setup.
From: High-fidelity geometric quantum gates exceeding 99.9% in germanium quantum dots
a False-colored SEM images of the device. The upper side is the DQD's structure, and the lower region serves as a charge sensor (blue circle). b Cross-section schematic of the device along the white dashed line in (a). Holes confined under gate P1 and P2 can tunnel to the reservoir under gate L1 and L2, with the tunnel rates adjusted by barrier gates B1 and B2. Square pulses and microwave pulses are applied to gates P1 and P2 for state readout and manipulation. c Charge stability diagram of DQDs. (N1, N2) represent the number of holes in the quantum dot under gate P1 and P2. Points E, L, and R represent the relative position of square pulses for ELR. d The latching region for ELR is indicated by parallel black dashed lines, where the distance corresponds to EST. Inset: energy level and state-ladder schematic at the latching region.
