Fig. 1: Device structure of 16-layer 3D Fe-diode.
a Structure of the 16-layer 3D Fe-diode. The green color represents the insulator layer, yellow represents the plane electrode, blue represents the ferroelectric layer, and red represents the bottom electrode. b Cross-sectional TEM image of a 3D Fe-diode. The scale bar is 200 nm. Each horizontal WL was opened by selective etching successively. The area of the memory cell was defined by the thickness of the bottom electrode TiN (20 nm) and the perimeter of the hole. c Magnified TEM image of a single 3D Fe-diode highlighted by the blue box in (b) (scale bar is 10 nm). The elemental composition of each layer of the 3D Fe-diode are labeled. d Multi-level conductance states of a single cell. e Multi-level storage distribution. f Classification of different noise types in electron devices. The ideal entropy source requires frequency-independent high noise density. g Normalized current power spectral density (S/I2) of the Fe-diode in HRS measured at various bias conditions.
