Fig. 6: Simulated performance metrics in the radiative limit with shallow defect effects. | Nature Communications

Fig. 6: Simulated performance metrics in the radiative limit with shallow defect effects.

From: Doping with phosphorus reduces anion vacancy disorder in CdSeTe semiconductors enabling higher solar cell efficiency

Fig. 6

Efficiency as a function of hole mobility (μp) and acceptor doping (NA) for Urbach energies of (a) Eu = 0 meV, (b) Eu = 20 meV, and (c) Eu = 30 meV. Common color legend on the right. Performance metrics for (d) short-circuit current (Jsc), (e) open-circuit voltage (Voc), and (f) fill factor (FF) as functions of μp for Eu = 0–30 meV and doping levels of NA = 1015 cm−3 (solid lines) and NA = 1017 cm−3 (dashed lines). The SQ limit for each metric is the horizontal dashed line.

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