Table 1 Electro-optical characteristics for undoped and doped (as indicated in column headings) CdSeTe heterostructures

From: Doping with phosphorus reduces anion vacancy disorder in CdSeTe semiconductors enabling higher solar cell efficiency

 

no doping

N

As−15

As-45

P−15

P-45

Sb

Eg, eV

1.397

1.395

1.378

1.411

1.379

1.399

 

Eu, meV

14.4

16.1

25.6

24.5

21.1

20.1

 

PLQY

4.1E-5

1.7E-5

5.8E-5

1.8E-6

1.2E-5

2.3E-6

3.0E-6

Stokes shift, meV

0

4

27

51

20

21

 

EA,D1/EA,D2, meV

100/130

140

190/215

90

70/85

90

10/420

Γ0, meV

276

181

344

202

132

182

 

DAP shift, meV

32.8

77.7

66.4

46.4

29.3

113.3

25.6

τ2,TRPL, 298 K, ns

24

45

420

78

125

45

480

τ2,TRPL, 4-50 K, ns

4200

5600

8500

5000

160

175-400

>3000

  1. Eg – from absorptance derivative, Eu – from fitting a(E) below the bandgap to a(E) ∝ exp((E-E0)/Eu), where E is energy and E0 is a constant, PLQY – PL emission quantum yield, Stokes shift – between Eg and PL emission maximum at 298 K, EA,D1/EA,D2 – defect activation energies, Γ0 – inhomogeneous spectral broadening measured as FWHM for D1 emission at <50 K, DAP shift – injection-dependent donor-acceptor pair emission shift at 4 K, τ2,TRPL – lifetime from single exponential fit to the TRPL decay.
Back to article page