Fig. 1: Concept of FeFET Pockels photonic memory.
a Schematic illustration of the FeFET Pockels photonic memory realized by integration of FeFET with LNOI MRR. b Ferroelectric polarization switching by electrical signal, causes the optical resonance shift. For instance, to encode the information “0.8,” the dipole polarization in HZO is switched, resulting in an optical resonance shift in the transmission spectrum. In practical applications using a monochromatic laser at wavelength λ, 80% (“0.8”) of the input light would transmit through the MRR. c SEM micrograph in false color of a FeFET Pockels photonic memory. The white represents the straight waveguide and MRR. Source and drain electrodes are depicted in yellow, while top gate (ITO) is depicted in blue. The channel is a ITOx-IGZO bilayer, which are depicted by dark blue. The yellow-red gradient-shaded structure represents HZO ferroelectric layer. d MRR transmission spectra in response to the ferroelectric HZO states. The non-volatile (NV) resonance shifts due to Pockels effect are induced by the stable remnant HZO ferroelectric dipoles.
