Fig. 1: Carrier plasmon-induced quasiparticle energy renormalization.
From: Moiré potential renormalization and ultra-flat bands induced by quasiparticle-plasmon coupling
a Schematic of doping-enhanced moiré potential in semiconducting vdW superlattices. V(r) and w(r) are the real-space moiré potential and wavefunction of quasielectrons, respectively. Under doping, the potential minimum drops due to inhomogeneous carrier distributions and QP energy renormalization. b Moiré superlattice formed by a twist between the H-type MoS2/WS2. The three high-symmetry stackings \(H_h^h\), \(H_h^X\), and \(H_h^M\) are labeled for simplicity as A, B, C, respectively. c Intrinsic moiré QP potential landscape along the three interlayer registries. The red dots represent first-principles GW results. d Bandgap, and e CBM renormalization for the three interlayer registries of H type MoS2/WS2 under electron doping. The dots are from many-body perturbation theory calculations.
