Fig. 5: Estimates of carrier mobilities using the 2D Fröhlich model. | npj Computational Materials

Fig. 5: Estimates of carrier mobilities using the 2D Fröhlich model.

From: High-throughput screening of 2D materials identifies p-type monolayer WS2 as potential ultra-high mobility semiconductor

Fig. 5

a Electron mobilities of 48 compounds in Set C, estimated using the polar phonon scattering model given by Eqs. (6, 8) of the “Methods”, at room temperature. The dataset contains 50 compounds, but antimonene and bismuthene are excluded as they are non-polar. b Estimated hole mobilities for the same dataset. The 2D Fröhlich model yields unrealistically high mobilities. The parameters used to generate these data are given in Supplementary Table 3.

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