Fig. 7: Carrier mobility of monolayer MoS2. | npj Computational Materials

Fig. 7: Carrier mobility of monolayer MoS2.

From: High-throughput screening of 2D materials identifies p-type monolayer WS2 as potential ultra-high mobility semiconductor

Fig. 7

a Side view and top view of a ball-stick model of MoS2. Mo is in pink, and S is in yellow. b DFT electronic band structure. c Phonon dispersion relations. d Carrier scattering rates from electron–phonon coupling. The left panel shows the scattering rates of holes (orange), and the right panel is for electrons (blue). e BTE phonon-limited hole mobility (orange) and electron mobility (blue) of MoS2. Scattering rates and mobilities are evaluated at 300 K for a carrier concentration of 1010 cm−2. The gray bars in e indicate the range of experimental values reported for monolayer MoS2, from refs. 29,30,31,32,33,34.

Back to article page