Abstract
Crystalline silicon solar cells continue to dominate the photovoltaic industry, with tunnel oxide passivating contact (TOPCon) technology emerging as a prominent candidate. However, the efficiency of industrial-scale TOPCon solar cells remains limited by their suboptimal electrical performance, falling short of the Auger limit. Here we propose a dual-sided synergistic strategy that achieves a certified efficiency of 26.66% for industrial-scale TOPCon cells on M10-size wafers. The implementation of a front-side high-sheet-resistance boron emitter improves the passivation quality, and an optimized grid design reduces carrier transport losses. A rear-side double-layer tunnel oxide silicon/polysilicon structure suppresses silver-induced degradation by preventing silver diffusion from the electrodes into the silicon substrate, thereby maintaining excellent interfacial passivation. Moreover, the high crystallinity of the inner polysilicon layer, along with a lower concentration of inactive phosphorus dopants in the silicon substrate, leads to superior passivation performance. Rear-side localized thinning of the polysilicon layer also improves the bifaciality to 88.3%.
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Acknowledgements
J. Ye acknowledges financial support from the Key Research and Development Program of Zhejiang Province (2021C01006), the Key Research and Development Program of Anhui Province (202423h08050004) and the Ningbo International Science and Technology Cooperation Program (2024H028). Y. Zeng acknowledges financial support from the Key Research and Development Program of Zhejiang Province (2024C01055), the Ningbo “Innovation 2025” Major Project (2022Z114), the Ningbo “Innovation 2035” Major Project (2024Z243), the National Natural Science Foundation of China (62474178) and the Science and Technology Projects in Liaoning Province 2021 (2021JHI/10400104).
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Z.Y. conceived of the idea, designed the overall experiments, led the project and wrote and revised the paper. J.M. produced and provided the cell samples. S.C., Z.L., Haojiang Du and Z.W. contributed to the materials characterization and participated in data interpretation (S.C. performed the characterization and analysis, including PL, EL, TEM and SEM experiments; Z.L. carried out the ECV, Raman and related characterization and analysis; Haojiang Du was responsible for the EQE, SIMS and related characterization and analysis; and Z.W. performed the passivation measurements). K.C. carried out the cell simulation and data analysis. Huiwei Du, J. Yang, P.Z., Y. Zeng and J. Ye managed the project and participated in the experimental design. Y. Zhang, J.C., J.Z., M.X., W.L., H.J. and X.Z. discussed the results. Z.Y. and K.C. were responsible for the figures, tables and preparation for publication. Y. Zeng and J. Ye provided resources and funding support. J. Yang and P.Z. established the research and development plan and led the team in achieving the certified efficiency. All authors commented on the paper.
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J.M., Z.W., Y. Zhang, J.C., J.Z., M.X., W.L., H.J., X.Z., J. Yang and P.Z. are employed by Zhejiang Jinko Solar Co., Ltd. The other authors declare no competing interests.
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Yang, Z., Chen, S., Mao, J. et al. Dual-side electrical refinement enables efficient industrial tunnel oxide passivating contact silicon solar cells. Nat Energy (2026). https://doi.org/10.1038/s41560-026-01982-2
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DOI: https://doi.org/10.1038/s41560-026-01982-2