Extended Data Fig. 1: Main results from a second device (D2).

a, An optical microscopy image of device D2 (WSe₂/six-layer hBN/MoSe₂ heterostructure) with flakes outlined. In this device, the MoSe₂ contacts in the second reservoir region are mechanically broken, preventing us from performing the Coulomb drag measurements. b, c, Measured R_h at B = 0 T (b) and 12 T (c). The results are consistent with the data from device D1 shown in the main text. d, Fan diagram of R_h along the CNL. Due to a smaller interlayer distance compared to device D1, the exciton binding energy is larger, requiring a larger magnetic field to induce QOs and EI-QHI phase transitions. e, R_h along the CNL at B = 12 T as a function of V_B and T.