Extended Data Fig. 2: Main results from a third device (D3). | Nature Materials

Extended Data Fig. 2: Main results from a third device (D3).

From: Competition between excitonic insulators and quantum Hall states in correlated electron–hole bilayers

Extended Data Fig. 2

a, An optical microscopy image of device D3 (WSe2/five-layer hBN/MoSe2 heterostructure). In this device, the TG is patterned to split the WSe2 contacts into four regions, enabling independent measurement of longitudinal and Hall resistances in the hole layer. b, c, Four-terminal longitudinal resistance Rxx (b) and Hall resistance Rxy (c) of the WSe2 layer, measured at B = 12 T. The longitudinal resistance vanishes periodically at integer hole filling, which is interrupted by the EI states near CNL. The Hall resistance shows quantized plateaus, consistent with typical QH states. d, A vertical linecut of Rxy at constant VG = 0.4 V (blue dashed line in c), confirming precise quantization of the Hall resistance.

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