Extended Data Table 2 Comparison of previous microcavity array trimming techniques to our parallel laser assisted thermal oxidation (bold). Estimated values are marked with a *. Δλ_p-p = peak-to-peak wavelength error; Q = mean quality factor

‘Holographic’ oxidation [2022]

Si PhC

64

13

2 × 10⁵

Y

Y

Germanium implantation [2021]

Si ring ¹⁰⁹

58

32

4 × 10³

Y

N

Laser-annealed cladding [2020]

Si ring ¹¹⁰

2

20*

2 × 10⁴

Y

N

Boron implantation [2019]

Si ring ¹¹¹

4

15

5 × 10³

Y

N

Electron-beam irradiation [2018]

Si PhC ¹¹²

4

400

3 × 10⁵

N

N

Photo-electro-chemical etching [2017]

GaAs disk ¹¹³

5

200*

2 × 10⁴

Y

N

Annealed cladding [2016]

Si ring ¹¹⁴

5

90*

3 × 10³

Y

N

Ultraviolet irradiation [2014]

a-Si ring ¹¹⁵

4

45

8 × 10³

Y

N

Post-fabrication etching [2013]

GaAs PhC ¹¹⁶

18

100*

3 × 10⁴

N

Y

Photochromatic thin-film [2011]

GaAs PhC ¹¹⁷

3

340

8 × 10³

Y

N

Anodic oxidation [2006]

GaAs PhC ¹¹⁸

2

100*

5 × 10³

N

N