Fig. 2: Radical OLED device structure and optoelectronic characterization.
From: Efficient near-infrared organic light-emitting diodes with emission from spin doublet excitons
a, Device structure with energy levels for hole injection layer (HIL), hole transport layer (HTL), emitting layer (EML) and electron transport layer (ETL). TAPC, 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane; TCTA, 4,4′,4″-tris(carbazol-9-yl)triphenyl-amine. b,c, EQE–current density (b) and radiance–current density (c) plots for the devices. d, EL spectra at 1 mA cm−2. e, J–V characteristics for the devices with and without TTM-TPA doping. f, Comparison of NIR OLEDs with peak wavelengths between ~780 nm and ~900 nm regarding maximum EQE and radiance (Supplementary Table 2).
