Extended Data Fig. 6: Gate-dependent PL and dynamic characterization of SPEs on nanogaps in another WSe2 monolayer device (device #2).
a, Gate-dependent PL spectra under 726 nm CW excitation (power: 300 nW). b, Gate-dependent PL lifetime and normalized integrated PL intensity of filtered emission under 726 nm pulse excitation. The PL lifetime and intensity have a qualitatively similar shape, indicating a gate-modulated nonradiative decay process. The lifetime is obtained by fitting the time-resolved PL data (~30 data points for every voltage; see Extended Data Fig. 4). The error bars are the standard deviation of the lifetime obtained from the fitting. c, Power dependence for the same SPE at different gate voltages. The lines are fitting with the power saturation function (see Supplementary Information Section 1). The emitter is excited by a 726 nm CW laser and a 726 nm pulse laser with 80 MHz repetition rate, respectively. The data is taken from emitter E1 in device #2. The optical microscopy image and the structure of device #2 are shown in Supplementary Fig. 7.
