Extended Data Fig. 5: Gate tunable lifetime and PL intensity of two other SPEs in WSe2 monolayer (device #1).
a, Gate-dependent PL spectra under 726 nm CW excitation (power: 300 nW). The orange arrow and the dashed line indicate the filtered peak studied in b. b, Gate-dependent PL lifetime and normalized integrated PL intensity of filtered emission under 726 nm pulse excitation (power 300 nW). The lifetime is obtained by fitting the time-resolved PL data (~30 data points for every voltage; see Extended Data Fig. 4). The error bars are the standard deviation of the lifetime obtained from the fitting. Inset: filtered PL spectrum at VT = VB = 0 V under 726 nm CW excitation (power 300 nW). The red line shows the Lorentzian fitting of the dominant peak. c-d, Similar to a and b but from another SPE under 726 nm CW excitation (power: 400 nW) and 726 nm pulse excitation (power: 400 nW). The dashed orange box in c indicates the filtered peak studied in d. In all studied SPEs, the PL lifetime and intensity have a qualitatively similar shape, indicating a gate-modulated nonradiative decay process.
