Extended Data Fig. 6: Waveform repeatability in atomic-scale THz-TDS.
a, STM topography images of Au(111) before (top left) and after (bottom left) atomic-scale THz-TDS on the GaAs(110) surface (right). Top left: Vd.c. = 1 V; Id.c. = 100 pA; height range 25 pm; image size 20 nm × 20 nm; scan speed 120 nm/s. Bottom left: Vd.c. = 0.1 V; Id.c. = 100 pA; height range 25 pm; image size 20 nm × 20 nm; scan speed 300 nm/s. Right: Vd.c. = 1.2 V; Id.c. = 100 pA; height range 200 pm; image size 7 nm × 14 nm; scan speed 33 nm/s. b,c, THz-CC waveforms (b) and spectra (c) acquired on Au(111) before (black cross in a; 2 averages; black curves) and after (orange star in a; 5 averages; orange curves) atomic-scale THz-TDS on GaAs(110). d, An average of ten THz-CC spectra acquired on pristine GaAs(110) (red circle in a) at Vd.c. = 1.2 V, Id.c. = 50 pA, ESF,pk = 150 V/cm, EWF,pk = –8 V/cm. e, An average of two THz-CC spectra acquired at the green plus in a (200 pm away from resonator defect) at Vd.c. = 1.2 V, Id.c. = 100 pA, ESF,pk = 110 V/cm, EWF,pk = –8 V/cm. f, An average of four THz-CC spectra acquired on the terahertz resonator defect (white cross in a) acquired at Vd.c. = 1.2 V, Id.c. = 100 pA, ESF,pk = 40 V/cm, EWF,pk = –8 V/cm. The data in c–f are shown as mean values ± s.d. of multiple scans.
