Extended Data Fig. 6: ASE measurements using nanosecond laser.
From: Ultrahigh-radiance near-infrared organic light-emitting diodes
a–g, The PL intensity of 5 wt% BTA3 (a,e), 10 wt% BTA3 (c,g) and ASE thresholds were derived based on 5 wt% BTA3 (b,f), 10 wt% BTA3 (d) with CBP and Poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) as host matrix. ASE thresholds were derived based on BTA3 with CBP and Poly(9,9-dioctylfluorene-alt-benzothiadiazole) (F8BT) as host matrix. The films were excited by 532 nm Nd:YAG laser (Q-smart, QSM-100-20-G) with a pulse duration of 5 ns and a repetition rate of 18 Hz. The average ASE threshold is estimated to be 20 μJ cm−2, corresponding to a photo flux of 4 μJ cm−2 /ns (1.07×1013 photons/cm2 /ns). This is equivalent to current density of 6.9 kA cm−2 (4.3×1013 charges/cm2 /ns), where only one quarter of injected charges become singlet excitons.
