Extended Data Fig. 7: Drift–diffusion simulation of the J–V characteristics of BTA3 OLEDs.
From: Ultrahigh-radiance near-infrared organic light-emitting diodes
The grey dashed line represents the diffusion current density by Shockley diode equation \(J={J}_{0}[\exp (\frac{{qV}}{{n}_{{\rm{id}}}{k}_{{\rm{B}}}T})-1]\) with an ideality factor nid of 1.2. Analysis of the exponential incline regime in the J–V characteristics of the device confirms that trap-assisted recombination dominates the current before turn-on, while trap-free bimolecular recombination starts to dominate the J–V curve after turn-on, as revealed by the ideality factor of 1.2. The driving voltage at 1 A cm−2 is found to be approximately 5.0V, which is much lower than those for NIR phosphorescent13 (~19 V @0.5 A cm−2) and TADF15 ( ~ 6 V@0.1 A cm−2) OLEDs and comparable to that for other best reported perovskite NIR LEDs7 (~4.5 V).
