Extended Data Fig. 2: Operation lifetime of non-doped OLEDs based on BTA3 at various current density.
From: Ultrahigh-radiance near-infrared organic light-emitting diodes
The active area of the measured devices based on sapphire substrate is 0.045 mm2 (a) and on glass substrate is 4.5 mm2 (b). Stability test was performed in air with encapsulation at room temperature, under continuous operating, constant current density mode. The operating half-lifetime of devices on sapphire substrate with active an area of 0.045 mm2 at 0.1 A cm‒2, 0.2 A cm‒2, 0.5 A cm‒2, 1 A cm‒2 and 5 A cm‒2 is 210.3 h, 106.6 h, 69.1 h, 35.0 h and 3.7 h, respectively. The operating half-lifetime of devices on glass substrate with an area of 4.5 mm2 at 0.1 A cm‒2, 0.2 A cm‒2 and 1 A cm‒2 is 58.0 h, 23.2 h and 11.0 h, respectively.
