Extended Data Fig. 4: Device 3 characterization.
From: Topological bands and correlated states in helical trilayer graphene
a, Rxx versus n and D, showing resistance peaks at charge neutrality (ν=0), at the moiré band gaps (ν = ± 4), and at the correlated states at ν=1,2,3. The contact resistance becomes very large when ν ≳ 3.2, leading to artifacts in the data. b, Field-trained ΔRyx measured at T = 300 mK and B = ± 60 mT versus ν and D. Hot spots near ν=1,3 indicate AHE. c,d, Field-antisymmetrized Ryx and field-symmetrized Rxx taken at ν=3.1 (cyan circle in b) and D/ϵ0 = 0 while sweeping B up (solid) and down (dashed) at different temperatures as indicated. The temperature color code in d is identical to c. e,f, Same as c,d, taken at ν=0.8 and D/ϵ0 = − 0.09 V/nm (pink triangle in b).
