Extended Data Fig. 5: Magnetoresistance at ν = −2 and −4 of device A (3.15°), and the transport gap fitting at ν = −2.
From: Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2
a-c, Rxx versus B|| and B⊥ at ν = −2 and D = −20 mV/nm (a), D = 260 mV/nm (b) and D = −300 mV/nm (c). d, Rxx versus B|| and B⊥ at ν = −4 at D = −200 mV/nm. The measurement temperature for a-d is 300 mK. e, Temperature dependence of Rxx at ν = −2 and D = −20 mV/nm of device A (3.15°). f, Temperature dependence of Rxx at ν = −2 and D = −650 mV/nm of device B (3.0°). Dashed lines in e and f are the fit to \({\rho }_{{xx}}{\propto e}^{-\varDelta /2{k}_{B}T}\), with \(\varDelta\) and \({k}_{B}\) denoting the transport gap and Boltzmann constant, respectively. We observe that below about 40 K, the temperature dependence of Rxx shown in e becomes metallic-like, presumably due to the interplay between bulk transport and edge transport of an IQSH insulator. Consequently, the thermal activation fitting range is very narrow in e, leading to a substantial uncertainty of the estimation for the real charge gap.
