Extended Data Fig. 3: Chemical potential sensing and band edge offset.

(a) δB_b for device C as a function of V ≡ v_t + v_b and v_t − v_b in the configuration with the sample grounded. The phase diagram exhibits both MoTe₂ features described in the main text as well as features associated with Landau levels of the top graphite gate. The band edge is visible as a kink in the constant top gate carrier density trajectory, marked as a dashed blue line, with the offset V₀ corresponding to the voltage that separates the regime where tMoTe₂ is insulating and the regime where it is hole-doped. The value obtained using this method agrees with that described in the main text using the ν = − 1 and ν = − 2/3 gap densities. (b) Schematic of the electric field in the hole-doped tMoTe₂ regime. Here modulations of the bottom gate produce electric fields δE_b which are screened by the tMoTe₂ layer. In this regime, the top gate density n_t is tuned solely by V_t, and trajectories of constant n_t follow slope − 1 on the diagram in panel a. (c) Schematic of the electric field in the insulating tMoTe₂ regime. Here δE_b penetrates the tMoTe₂, so that n_t is tuned by both v_t and v_b. In this regime, constant-n_t lines have slope 0 in panel a.