Fig. 2
From: Unconventional magnetoresistance and resistivity scaling in amorphous CoSi thin films
Electrical transport and resistivity scaling of the different films. (a) Resistivity scaling as a function of the temperature. A clear decreasing trend is noticeable at all temperatures down to a thickness of 3.2 nm. The 2.0-nm thick film exhibits a considerably higher resistivity value. An upturn in the resistivity is observable in the ultra-scaled samples at cryogenic temperatures. (b) Hall resistivity for the 3.2-nm film. An anomalous component to the signal starts to be noticeable around 20 K. (c) Charge carrier density and mobility extracted from Hall measurements (as shown in b) as a function of the thickness, taken at T = 300 K. For extreme scaled thicknesses the mobility decreases and the carrier density increases.
