Fig. 3
From: Unconventional magnetoresistance and resistivity scaling in amorphous CoSi thin films
EDX cuts and Hall resistivity for the uncapped and capped 2-nm samples. (a) EDX cut of the 2.0-nm film. A Co excess is observed in the film due to the formation of native oxide on top which depletes oxygen from the CoSi layer. (b) EDX cut of the 2.0-nm film (capped). The Si-cap prevents the oxidation and keeps the right stoichiometry in the deposited film. (c) Hall resistivity of the 2.0-nm uncapped sample. The Co-excess is responsible for the observed anomalous contribution to the Hall signal. (d) Hall resistivity of the 2.0-nm capped sample. The Hall signal is linear and consistent with the ones of thicker films, where the impact of the oxide on the composition is negligible (see Supplementary Materials).
