Fig. 4

Scaling trends for resistivity and magnetoresistance as a function of film thickness. (a) Resistivity scaling model for the amorphous CoSi and comparison with textured films. The error bars indicate a ± 0.5 nm uncertainty in thickness due to oxidation, where the upper thickness estimate correlates with the measured values using RBS (black dots represent the center values and not the RBS-normalized ones). (b) Resistivity scaling including the Si-capped sample. The value of the resistivity does not vary significantly from the value measured in the uncapped sample (RBS thickness values are used for the normalization). (c) Magnetoresistance as a function of the thickness, measured at T = 2 K and B = 9 T. The data point of the capped sample reveals a clear increasing trend for the MR in ultra-scaled films. Green dots report the scaling trend of textured films, which is in contrast with the observed increase in MR in amorphous films.