Table 2 Material constants used in the proposed model.

From: Investigating the effect of electrical and thermal transport properties on oxide-based memristors performance and reliability

Constants

Value

Hopping distance (a)

3.2 Å

Escape attempt frequency (f)

1012 HZ

Linear thermal coefficient (λ)

0.1

Room temperature (T0)

293 K

VO diffusion barrier (Ea)

0.85 eV

PF coefficient 1 (α)

5.48 × 10-4

PF coefficient 2 (β)

-5.7