Fig. 1 | Scientific Reports

Fig. 1

From: Advanced polynomial Y-function method for precise mobility characterization in 2D FETs

Fig. 1

MoS2 FETs and measurement setup. (a) Schematic representation of BG-FET and TG-FET, along with optical microscope images of the fabricated devices. (b) AFM measurements of MoS2 and Al2O3 layer thicknesses. (c) Schematic of the measurement setup used for the MPIV method. (d) Transfer characteristics of the BG-FET measured using a conventional SMU under vacuum conditions. (e) Transfer characteristics of the BG-FET measured using the MPIV method, demonstrating hysteresis suppression and reduced bias stress effects.

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