Table 5 CNTFET model parameters and their values.
From: Energy-efficient design of CNTFET-based quaternary arithmetic circuits
Parameter | Description | Value |
|---|---|---|
Lch | Physical Channel Length | 32 nm |
Lss | Length of doped CNT source-side extension region | 32 nm |
Ldd | Length of doped CNT drain-side extension region | 32 nm |
Lgeff | Scattering mean free path in the intrinsic CNT | 100 nm |
Pitch | The distance between the centers of two neighboring CNTs within the same device | 20 nm |
Leff | The mean free path in p+/n + doped CNT | 15 nm |
Kox | Dielectric constant of high-k top gate dielectric material | 16 |
Tox | Thickness of high-k top gate dielectric material | 4 nm |
Ksub | Dielectric constant of substrate (SiO2) | 4 |
Csub | Coupling capacitance between the channel region and the substrate | 40 aF/µm |
