Fig. 3 | Scientific Reports

Fig. 3

From: Crystal structure modulating performances for 213-nm GeO2 solar-blind photodetectors via DC reactive magnetron sputtering method

Fig. 3

(a) Cross-sectional TEM image of the A11P2 sample. High magnification TEM images of A11P2 sample for (b) the γ-GeO2 layer and (c) the interface between GeO2 film and substrate. (d) Cross-sectional TEM image of the A11P4 sample. High magnification TEM images of A11P4 sample with (e) the GeO2 layer and (f) the interface between α-GeO2 film and substrate. Electron diffraction patterns of (g) hexagonal and (h) rutile GeO2 layers. (i) Low magnification TEM cross-sectional view of A11P4 test sample and elements mappings of Al, O, In, and Pt atoms in their respective films.

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