Table 1 Comparison of the characteristic photoresponse parameters of SBUP based on GeO2 thin films with other previously reported devices.
Sample Name | λ (nm) | Bias (V) | R (A/W) | Tr/Tf (s) | D* (Jones) | Ref. |
|---|---|---|---|---|---|---|
Ga2O3 thin film | 254 | 10 | 3.70 × 10− 2 | ― | ― | |
Ga2O3/CuCrO2 | 254 | 0 | 1.20 × 10− 4 | 0.35/0.06 | 0.90 × 1011 | |
Ga2O3/CuGaO2 | 254 | 0 | 2.50 × 10− 5 | 0.26/0.14 | 4.60 × 1011 | |
a/b phase junction Ga2O3 | 254 | 0 | 5.21 × 10− 3 | 0.12/0.29 | 1.45 × 1014 | |
(Al0.68Ga0.32)2O3/Ga2O3:Si | 198 | -10 | 8.60 × 10− 2 | 1.20/0.20 | ― | |
a-GeO2 thin film | 213 | 40 | 4.56 | 0.12/0.14 | 6.78 × 1013 | This work |
