Fig. 1 | Scientific Reports

Fig. 1

From: Field-free spin hall oscillator based on giant magnetoresistance effect and its potential for electrical synchronization

Fig. 1

(a) Film structure of the field-free SHNO with non-parallel easy axis of reference layer and free layer. The current direction is along the easy axis of the reference layer. (b) Schematic drawing of a nano-constriction-based SHNO and narrowest region is 30 nm width. (c) Relationship between the anisotropy magnetoresistance and magnetization angle. (d) Relationship between the giant magnetoresistance and external field after two-steps annealing; inset: hysteresis effect on the magnetoresistance curve without two-steps annealing.

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