Fig. 2
From: Phase transitions and chemical segregation in Ge-rich GST based phase change memory cells
physical and chemical characterization of GGST-based PCM of the forming (I4) and full RESET states in 90 nm technology: (a) STEM-DF images where white dotted line shows the extension of the amorphous dome. Scale bars reported in the bottom left of the figures hold the same relative size for all the manuscript for the sake of comparison; (b) EELS maps using a RGB color-code proportional to the [Ge, Sb, Te] % contents (where Ge is reported in red, Te in blue and Sb in green). White dotted lines show the extension of the active area and of related sub-regions. Yellow circle highlights the location of α-layer; (c) Sb signal maps where white dotted lines show the extension of the active area while red dashed lines show the Sb-depleted region; (d) Sb vs Ge scatter plots using a color-code proportional to the distance from the heater according to the legend reported in the inset. Colored circles show active regions of interest.
