Fig. 3: The study and modeling of the devices’ responses.
From: Graphene-based 3D XNOR-VRRAM with ternary precision for neuromorphic computing
a, b Spatial DC curves from randomly selected a Pt-RRAM and b Gr-RRAM devices. All the measured devices exhibit similar behavior for multiple cycles. c Endurance pulse test of the Gr-RRAM device, where the minimum detected ON/OFF ratio is greater than 10×. d Retention time results of Gr-RRAM before unintended resistance shift occurs under reading voltage (0.1 V bias) and various thermal stresses ranging from ~145 to 200 °C. The read noise at different temperatures is retrieved, where the measurement of the RRAM resistance state showed strong fluctuations in elevated temperature environments. Inset: Resistance distribution example under 155 °C thermal stress prior to the unintended shift. e, f Experimental mean and simulated Verilog-A model switching characteristics for e Pt-RRAM with 80 μA switching current (IW), and f Gr-RRAM with IW = 5 μA.
