Fig. 1: Device structure of all-CVD MoS2 field-effect transistors with graphene contacts.
From: All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts
a Schematic of the MoS2 FET with van der Waals graphene contacts on SiO2/Si substrate. b Optical image of the fabricated heterostructure device of CVD monolayer MoS2 (colored-green triangle) transferred on the CVD graphene stripes. The metallic contacts on graphene are deposited for external electronic connections for electrical measurements. The scale bar is 10 μm, and the average channel width and length are 10.75 μm and 11 μm, respectively. c Band diagram of graphene and n-type MoS2 along with associated Fermi levels (EF) in these materials that are tunable via gate voltage (Vg). d Raman spectra of single-layer CVD graphene and MoS2 using 638 nm LASER. e Gate-dependent resistivity of graphene channels in heterostructure and pristine regions, probed with four-terminal measurement geometry. f MoS2 FET characterization with conventional metallic contacts showing Ids vs. Vg at Vds = 1 V in linear and logarithmic scale. All the measurements are conducted at room temperature. The device micrograph is in the inset, and the scale bar is 10 μm. The channel length and width are 1.4 μm and 12 μm.
