Fig. 4: Gate- and bias-induced metal-to-insulator transition in the all-CVD MoS2 FET with graphene contacts.
From: All-2D CVD-grown semiconductor field-effect transistors with van der Waals graphene contacts
a, b Measured temperature-dependent transfer characteristics and corresponding color contour plots of the all-CVD MoS2 FET with vdW graphene contacts at Vds = 1 V, 5 V, and 10 V, respectively. c Estimated hopping parameter, ξ, as a function of Vg for the MoS2 FET with vdW graphene contacts at various Vds. d Deformation of hopping potential barrier of the MoS2 channel at low and high biases.
