Table 1 Performance comparison of the typical Ga₂O₃-based UV photodetectors

NGr/Ga₂O₃/GaN

8.3@5 V

9 × 10¹⁴

10⁶

0.69/3.95 s

³⁷

n-Ga₂O₃/p-GaN

41.6@5 V

3.3 × 10¹²

10³

2.76/32 μs

³⁸

GaSe/β-Ga₂O₃

51.9@10 V

2.52 × 10¹⁴

–

0.32/52.6 μs

³⁹

La₂O₃/ε-Ga₂O₃

0.00167@5 V

2.31 × 10¹¹

10⁴

142.9/135.8 ms

⁴⁰

CuCrO₂/Ga₂O₃

0.00012@0 V

4.6 × 10¹¹

10⁴

0.35/0.06 s

⁴¹

GaN/Ga₂O₃/GaN

0.00422@0.5 V

1.13 × 10¹¹

154

118 μs

⁴²

β-Ga₂O₃

43.5@5 V

2.81 × 10¹⁴

–

62/142 μs

⁴³

Ta-doped β-Ga₂O₃

1.32×10⁶@1 V

5.68 × 10¹⁴

10¹⁰

3.5 ms

⁴⁴

p-PCDTBT/n-Ga₂O₃

187@20 V

1.3 × 10¹⁶

10⁵

1.72/1.26 s

⁴⁵

PEDOT:PSS/β-Ga₂O₃

0.5@0 V

1.21 × 10¹²

10⁵

1.63/1.65 s

⁴⁶

Ag NP/β-Ga₂O₃

1.62@4 V

–

–

0.023/0.021 s

⁴⁷

Sn-doped β-Ga₂O₃

300@50 V

–

10⁸

38.8 μs

⁴⁸

p-CuAlO₂/β-Ga₂O₃

0.026@0 V

2.87 × 10¹⁰

10⁴

0.25/0.15 s

⁴⁹

2D Ga₂O₃

115.5@10 V

2.8 × 10¹³

10⁷

1.18/3.09 μs

This work