Fig. 5: Simulation of exciton redistribution among localized QEs.
From: Strain-induced exciton redistribution among quantum emitters in two-dimensional materials
a Exciton density distribution at Fp = 50 kV/cm with and without convolution with the point-spread function (PSF). The 250 nm PSF reproduces the effect of the collection optics. The result without convolution is the left portion of the image. The white arrow indicates the arc of circumference along which band gap variation and exciton density (without convolution) are extracted to build up (c). The white rectangle highlights the region selected for (d), where both defects gaining and losing excitons occur. b Variation of the exciton density distribution, obtained by subtracting the exciton density at Fp = 25 and 50 kV/cm after the PSF convolution. c Band-gap energy variation and d exciton density as recorded along the white arrow in (a) for Fp = 50 kV/cm and Fp = 25 kV/cm. For clarity, the black dashed line shows the energy shift obtained for Fp = 50 kV/cm red-shifted by 6.9 meV. e Schematics of the 3D exciton density for the five protuberances highlighted by the white box in (a) at Fp = 25 and 50 kV/cm after a Gaussian smoothing. The three central protuberances gain excitons while the two later ones lose carriers.
