Fig. 2: Measurement of the junction and nanosheet resistance.
From: Junction engineering in solution-processed nanosheet networks
a Impedance spectrum of a nanosheet network of MoS2, showing the real (Z’) and imaginary (−Z”) impedances. These spectra are a function of channel length, L, the channel width, w, the porosity, P, and nanosheet thickness, tNS, as shown adjacent. b The same spectra converted to that of a nanosheet–junction pair characteristic of the network using Eq. 1 in the main text. These spectra can now be fitted with Randles circuit equations to extract values of RNS, RJ, and CJ, with n being the width of the distribution of these values. c Temperature-dependent impedance measurements on an MoS2 network, showing decreasing junction resistance (low frequency) and increasing nanosheet resistance (high frequency) with increasing temperature. d The junction resistance, RJ, extracted from the data in c plotted against 1/T, showing a transition from 3D variable-range hopping at low temperature to activated behaviour at higher temperature. e The nanosheet resistance, RNS, extracted from c plotted against temperature. The data fit a phonon-limited transport model, with α = 1.1. All data shown here are reproduced from ref. 14 under a CC Attribution 4.0 International License.
